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IRF2807

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2807 1 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2807 is a power MOSFET manufactured by International Rectifier (now part of Infineon Technologies). Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 82A (at 25°C)  
- **Pulsed Drain Current (IDM):** 330A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 330W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.0075Ω (max at VGS = 10V)  
- **Total Gate Charge (Qg):** 170nC (typical)  
- **Input Capacitance (Ciss):** 5400pF  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRF2807 is an N-channel power MOSFET designed for high-current, high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Advanced HEXFET® technology for low conduction losses  
- High current handling capability  
- Low gate charge for improved switching performance  
- Avalanche energy rated for ruggedness  
- TO-220AB package for easy mounting  

This information is based solely on the manufacturer's datasheet.

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