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IRF2805S from IR,International Rectifier

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IRF2805S

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF2805S IR 4800 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF2805S is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on the manufacturer's data:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 75A (at 25°C)  
- **Pulsed Drain Current (IDM):** 300A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 6.5mΩ (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 110nC (typical)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF2805S is an N-channel power MOSFET designed for high-current, high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in automotive, industrial, and consumer electronics.  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses.  
- **Low RDS(on)** for improved efficiency.  
- **Fast Switching Speed** for high-frequency applications.  
- **Avalanche Energy Rated** for ruggedness.  
- **Fully Characterized for Dynamic Performance** to ensure reliability in switching circuits.  
- **Lead-Free and RoHS Compliant** for environmental safety.  

The device is commonly used in DC-DC converters, motor control, and power supply applications.  

*(Data sourced from International Rectifier (IR) product documentation.)*

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