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IRF2805 from IR,International Rectifier

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IRF2805

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2805 IR 1550 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2805 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 75A (at 25°C)  
- **Pulsed Drain Current (IDM):** 300A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.0065Ω (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 3000pF (typical)  
- **Output Capacitance (Coss):** 600pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**
The IRF2805 is an N-channel power MOSFET designed for high-current, high-efficiency switching applications. It is part of IR's HEXFET® power MOSFET family, which provides low on-resistance and fast switching performance.  

### **Features:**
- **Advanced Process Technology:** Optimized for low RDS(on) and high switching speed.  
- **Low Gate Charge:** Enhances switching efficiency.  
- **Avalanche Energy Specified:** Ensures robustness in inductive load applications.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **TO-220AB Package:** Provides reliable thermal performance and ease of mounting.  
- **Fully Characterized for Dynamic dV/dt Ratings:** Ensures stable performance in high-speed switching circuits.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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