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IRF2804S from IR,International Rectifier

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IRF2804S

Manufacturer: IR

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF2804S IR 1000 In Stock

Description and Introduction

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF2804S is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 75A  
- **Pulsed Drain Current (IDM):** 300A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  
- **Input Capacitance (Ciss):** 3200pF  
- **Output Capacitance (Coss):** 1000pF  
- **Reverse Transfer Capacitance (Crss):** 200pF  
- **Turn-On Delay Time (td(on)):** 15ns  
- **Rise Time (tr):** 60ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Fall Time (tf):** 30ns  
- **Package:** TO-263 (D2PAK)  

### **Descriptions:**  
- The IRF2804S is a high-current, low on-resistance N-channel MOSFET designed for power switching applications.  
- It is optimized for high efficiency in DC-DC converters, motor control, and other power management systems.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Enhances performance in high-frequency applications.  
- **High Current Handling:** Suitable for high-power applications.  
- **Avalanche Rated:** Ensures robustness in rugged environments.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based on the manufacturer's datasheet and technical documentation.

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