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IRF2804S-7P from IR,International Rectifier

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IRF2804S-7P

Manufacturer: IR

AUTOMOTIVE MOSFET

Partnumber Manufacturer Quantity Availability
IRF2804S-7P,IRF2804S7P IR 70 In Stock

Description and Introduction

AUTOMOTIVE MOSFET The IRF2804S-7P is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 75A (at 25°C)  
- **Pulsed Drain Current (IDM):** 300A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 2.0mΩ (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 3800pF (typical)  
- **Output Capacitance (Coss):** 1100pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-263-7 (D2PAK)  

### **Descriptions:**
- The IRF2804S-7P is a **N-channel power MOSFET** designed for high-efficiency switching applications.  
- It features **low on-resistance** and **high current handling capability**, making it suitable for power management in automotive, industrial, and consumer electronics.  
- The **TO-263-7 package** provides improved thermal performance compared to standard TO-220 packages.  

### **Features:**
- **Low RDS(on)** for reduced conduction losses.  
- **Fast switching speed** for high-frequency applications.  
- **Avalanche energy specified** for ruggedness in inductive load switching.  
- **Lead-free and RoHS compliant**.  
- **Optimized for synchronous rectification** in DC-DC converters.  

This information is based on the manufacturer's datasheet and technical documentation. For detailed performance curves and application notes, refer to the official datasheet from Infineon Technologies.

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