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IRF2204S from IR,International Rectifier

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IRF2204S

Manufacturer: IR

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF2204S IR 4800 In Stock

Description and Introduction

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF2204S is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on the manufacturer's data:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 195A @ 25°C  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 330W @ 25°C  
- **On-Resistance (RDS(on)):** 2.2mΩ @ VGS = 10V  
- **Input Capacitance (Ciss):** 4200pF  
- **Output Capacitance (Coss):** 1200pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  
- **Turn-On Delay Time (td(on)):** 12ns  
- **Rise Time (tr):** 30ns  
- **Turn-Off Delay Time (td(off)):** 36ns  
- **Fall Time (tf):** 20ns  

### **Description:**
The IRF2204S is a **N-channel** power MOSFET designed for high-current, low-voltage applications. It features ultra-low on-resistance (RDS(on)) and fast switching capabilities, making it suitable for high-efficiency power conversion in motor drives, DC-DC converters, and synchronous rectification circuits.

### **Features:**
- **Low RDS(on) for Reduced Conduction Losses**  
- **High Current Handling Capability**  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Improved dv/dt Capability**  
- **TO-263 (D2PAK) Package for Efficient Thermal Performance**  
- **Lead-Free and RoHS Compliant**  

This MOSFET is optimized for applications requiring high power density and efficiency in automotive, industrial, and computing power systems.

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