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IRF2204 from IR,International Rectifier

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IRF2204

Manufacturer: IR

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF2204 IR 600 In Stock

Description and Introduction

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF2204 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 195A  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Gate Charge (Qg):** 120nC (typical)  
- **Input Capacitance (Ciss):** 4200pF (typical)  
- **Output Capacitance (Coss):** 1200pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 65ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF2204 is a high-current, low-on-resistance N-channel MOSFET designed for power switching applications. It features fast switching speeds and low gate drive requirements, making it suitable for high-efficiency power conversion systems.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current handling capability  
- Fast switching performance  
- Improved dv/dt capability  
- Robust and reliable design  
- Suitable for motor control, power supplies, and DC-DC converters  

This information is based on the manufacturer's datasheet and technical documentation.

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