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IRF1902 from IOR,International Rectifier

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IRF1902

Manufacturer: IOR

20V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF1902 IOR 600 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF1902 is a power MOSFET manufactured by International Rectifier (IOR). Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** International Rectifier (IOR)  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 42A  
- **Pulsed Drain Current (IDM):** 168A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 150W  
- **On-Resistance (RDS(on)):** 0.022Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 500pF  
- **Reverse Transfer Capacitance (Crss):** 150pF  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-220AB  

### **Descriptions:**
- The IRF1902 is a high-current, low-on-resistance N-channel MOSFET designed for power switching applications.  
- It is optimized for high efficiency and fast switching performance.  
- Suitable for DC-DC converters, motor control, and power management circuits.  

### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Enhances performance in high-frequency applications.  
- **High Current Handling:** Supports up to 42A continuous drain current.  
- **Robust Design:** Withstands high power dissipation and temperature extremes.  
- **Avalanche Energy Rated:** Ensures reliability under transient conditions.  

For detailed datasheet information, refer to the official documentation from International Rectifier (IOR).

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