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IRF1407PBF from IR,International Rectifier

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IRF1407PBF

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF1407PBF IR 12000 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF1407PBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF1407PBF is a N-channel power MOSFET designed for high-efficiency switching applications. It is part of Infineon's HEXFET® Power MOSFET series, offering low on-resistance and fast switching performance.  

### **Key Features:**  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 130A at 25°C  
- **Pulsed Drain Current (IDM):** 520A  
- **Power Dissipation (PD):** 330W at 25°C  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.3mΩ at VGS = 10V  
- **Total Gate Charge (Qg):** 180nC (typical)  
- **Avalanche Energy (EAS):** 1.1J (single pulse)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power supplies  
- Automotive systems  
- High-current switching circuits  

This information is based on the manufacturer's datasheet and technical specifications.

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