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IRF1405ZPBF from IR,International Rectifier

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IRF1405ZPBF

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF1405ZPBF IR 16500 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF1405ZPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 169A (at 25°C)  
- **Pulsed Drain Current (IDM):** 680A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 330W (at 25°C)  
- **RDS(on) (Max):** 3.7mΩ (at VGS = 10V)  
- **RDS(on) (Max):** 4.5mΩ (at VGS = 4.5V)  
- **Threshold Voltage (VGS(th)):** 2V (Min) – 4V (Max)  
- **Total Gate Charge (Qg):** 210nC (at VGS = 10V)  
- **Input Capacitance (Ciss):** 8520pF  
- **Output Capacitance (Coss):** 1300pF  
- **Reverse Transfer Capacitance (Crss):** 380pF  
- **Avalanche Energy (EAS):** 1.1J  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:**  
- **TO-220AB (Through-Hole)**  

### **Description:**  
The IRF1405ZPBF is a high-current, low-on-resistance N-channel MOSFET designed for power switching applications. It is optimized for high efficiency and fast switching performance in automotive, industrial, and power management systems.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **High Current Handling:** Supports up to 169A continuous current.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Rated:** Enhanced ruggedness for inductive load handling.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This information is based on the manufacturer’s datasheet. For detailed performance curves and application notes, refer to Infineon’s official documentation.

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