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IRF1312STRLPBF from IR,International Rectifier

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IRF1312STRLPBF

Manufacturer: IR

80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF1312STRLPBF IR 6000 In Stock

Description and Introduction

80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF1312STRLPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 200V  
- **Continuous Drain Current (ID):** 42A (at 25°C)  
- **Pulsed Drain Current (IDM):** 168A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 230W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.023Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 3000pF (typical)  
- **Output Capacitance (Coss):** 500pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRF1312STRLPBF is a high-performance N-channel power MOSFET designed for applications requiring high current handling and low on-resistance. It is optimized for switching applications in power supplies, motor control, and other high-efficiency systems.  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching performance  
- High current capability  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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