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IRF1312 from DKD

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IRF1312

Manufacturer: DKD

80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF1312 DKD 10000 In Stock

Description and Introduction

80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF1312 is a power MOSFET manufactured by DKD. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 200V  
- **Continuous Drain Current (ID):** 9.7A  
- **Pulsed Drain Current (IDM):** 39A  
- **Power Dissipation (PD):** 75W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.4Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 700pF (typ)  
- **Output Capacitance (Coss):** 150pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The IRF1312 is an N-channel MOSFET designed for high-speed switching applications. It is commonly used in power supplies, motor control, and DC-DC converters due to its low on-resistance and high current handling capability.  

### **Features:**  
- **High Voltage Rating:** 200V drain-source voltage for robust performance.  
- **Low On-Resistance:** Minimizes conduction losses for improved efficiency.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances reliability in rugged environments.  
- **TO-220 Package:** Provides efficient thermal dissipation.  

This information is strictly based on the available specifications and does not include any additional recommendations or usage guidance.

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