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IRF1310S from IR,International Rectifier

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IRF1310S

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF1310S IR 189 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF1310S is a power MOSFET manufactured by International Rectifier (IR). Below are its key specifications, descriptions, and features:

### **Manufacturer Specifications:**
- **Manufacturer:** International Rectifier (IR)  
- **Type:** N-Channel Power MOSFET  
- **Package:** TO-204AA (TO-3)  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 42A  
- **Pulsed Drain Current (IDM):** 160A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.08Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 600pF  
- **Reverse Transfer Capacitance (Crss):** 150pF  
- **Turn-On Delay Time (td(on)):** 15ns  
- **Rise Time (tr):** 60ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Fall Time (tf):** 30ns  

### **Description:**
The IRF1310S is a high-current, high-voltage N-Channel MOSFET designed for power switching applications. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency power conversion.

### **Features:**
- **High Current Handling:** Capable of continuous drain current up to 42A.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Robust Construction:** TO-3 metal package for efficient heat dissipation.  
- **Avalanche Energy Rated:** Enhances reliability in rugged conditions.  
- **Logic-Level Compatible:** Can be driven by standard logic-level signals (with sufficient gate drive).  

This information is based solely on the manufacturer's datasheet.

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