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IRF1310NSTRRPBF from IR,International Rectifier

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IRF1310NSTRRPBF

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF1310NSTRRPBF IR 800 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF1310NSTRRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF1310NSTRRPBF  

### **Description:**  
The IRF1310NSTRRPBF is an N-channel power MOSFET designed for high-efficiency power switching applications. It is part of Infineon's HEXFET® power MOSFET series, known for low on-resistance and fast switching performance.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 42A (at 25°C)  
- **Pulsed Drain Current (IDM):** 168A  
- **Power Dissipation (PD):** 94W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.027Ω (max at VGS = 10V, ID = 21A)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1600pF (typical)  
- **Output Capacitance (Coss):** 400pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Robust against inductive load switching.  
- **TO-263 (D2PAK) Package:** Suitable for surface-mount applications with good thermal performance.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power supplies  
- Switching regulators  
- Automotive systems  

This information is based solely on the manufacturer's datasheet and technical documentation.

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