60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF1010E is a power MOSFET manufactured by various semiconductor companies, including Infineon Technologies and Vishay. Below are the factual specifications, descriptions, and features based on available data:
### **Manufacturer Specifications:**
- **Manufacturer:** Infineon Technologies, Vishay, or other semiconductor suppliers
- **Type:** N-Channel Power MOSFET
- **Package:** TO-220AB
- **Drain-Source Voltage (VDSS):** 55V
- **Continuous Drain Current (ID):** 85A (at 25°C)
- **Pulsed Drain Current (IDM):** 340A
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 200W (at 25°C)
- **On-Resistance (RDS(on)):** 12mΩ (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2-4V
- **Input Capacitance (Ciss):** 2800pF (typical)
- **Output Capacitance (Coss):** 900pF (typical)
- **Reverse Transfer Capacitance (Crss):** 200pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 60ns (typical)
- **Operating Temperature Range:** -55°C to +175°C
### **Descriptions:**
- The IRF1010E is a high-current, low-on-resistance N-channel MOSFET designed for power switching applications.
- It is commonly used in power supplies, motor control, DC-DC converters, and other high-efficiency switching circuits.
- The TO-220AB package provides good thermal performance and ease of mounting on heat sinks.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses for improved efficiency.
- **High Current Handling:** Supports high continuous and pulsed current ratings.
- **Fast Switching:** Suitable for high-frequency applications.
- **Avalanche Energy Rated:** Enhances reliability in rugged environments.
- **Logic-Level Gate Drive (in some variants):** Can be driven by lower gate voltages (check datasheet for specific models).
For precise details, always refer to the manufacturer's datasheet for the exact variant being used.
