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IR51H737 from IR,International Rectifier

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IR51H737

Manufacturer: IR

SELF-OSCILLATING HALF-BRIDGE

Partnumber Manufacturer Quantity Availability
IR51H737 IR 21 In Stock

Description and Introduction

SELF-OSCILLATING HALF-BRIDGE The IR51H737 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details about its specifications, descriptions, and features:

### **Specifications:**  
- **Voltage Rating (VDSS):** 500V  
- **Current Rating (ID):** 3.6A (at 25°C)  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Gate Threshold Voltage (VGS(th)):** 2V to 4V  
- **Power Dissipation (PD):** 38W (at 25°C)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The IR51H737 is a high-voltage N-channel MOSFET designed for power switching applications.  
- It is part of IR’s HEXFET® power MOSFET series, known for efficiency and reliability.  
- Suitable for use in power supplies, motor control, and other high-voltage circuits.  

### **Features:**  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Low Gate Charge:** Enhances efficiency in high-frequency circuits.  
- **Avalanche Energy Rated:** Provides robustness in inductive load conditions.  
- **TO-220 Package:** Standard through-hole mounting for easy integration.  

This information is based solely on the manufacturer's datasheet and product documentation.

Application Scenarios & Design Considerations

SELF-OSCILLATING HALF-BRIDGE

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