3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a 28-lead SOIC package The IR2135STR is a high-voltage, high-speed power MOSFET and IGBT driver manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Supply Voltage (VCC):** 10V to 20V
- **Logic Input Voltage (VIN):** 3.3V to 20V (TTL/CMOS compatible)
- **Output Current (Peak):** ±200mA (source/sink)
- **Floating Section Voltage (VS):** Up to 600V
- **Operating Temperature Range:** -40°C to +125°C
- **Propagation Delay (Typical):** 120ns
- **Dead Time (Internal):** 1.2μs (typical)
- **Package:** 28-Lead SOIC
### **Descriptions:**
- The IR2135STR is a three-phase gate driver IC designed for high-voltage applications, including motor drives and inverters.
- It integrates high-side and low-side drivers with independent inputs for each phase.
- The device includes under-voltage lockout (UVLO) protection for both high-side and low-side drivers.
- It features a built-in dead-time generator to prevent shoot-through in half-bridge configurations.
### **Features:**
- **High-Voltage Level Shifting:** Allows driving high-side MOSFETs/IGBTs up to 600V.
- **Cross-Conduction Prevention:** Internal dead-time generation ensures safe switching.
- **UVLO Protection:** Prevents malfunction during low supply voltage conditions.
- **Fault Reporting:** Provides a fault output signal for overcurrent or undervoltage events.
- **TTL/CMOS Compatible Inputs:** Supports logic-level control signals.
- **Matched Propagation Delays:** Ensures synchronized switching.
- **Low Power Consumption:** Optimized for efficiency in high-frequency applications.
This information is based on the manufacturer's datasheet for the IR2135STR.
