CoolMOS? Power Transistor The **IPW90R500C3** is a power MOSFET manufactured by **Infineon Technologies**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPW90R500C3
- **Transistor Type:** N-Channel MOSFET
- **Technology:** CoolMOS™ C3
- **Drain-Source Voltage (VDS):** 900 V
- **Continuous Drain Current (ID):** 7.5 A (at 25°C)
- **Pulsed Drain Current (IDM):** 30 A
- **Power Dissipation (Ptot):** 190 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-State Resistance (RDS(on)):** 500 mΩ (max) at VGS = 10 V
- **Input Capacitance (Ciss):** 950 pF
- **Output Capacitance (Coss):** 100 pF
- **Reverse Transfer Capacitance (Crss):** 15 pF
- **Turn-On Delay Time (td(on)):** 12 ns
- **Turn-Off Delay Time (td(off)):** 70 ns
- **Operating Junction Temperature (TJ):** -55°C to +150°C
- **Package:** TO-247
### **Description:**
The **IPW90R500C3** is a high-voltage **N-Channel MOSFET** from Infineon’s **CoolMOS™ C3** series, designed for efficient switching applications. It offers **low conduction and switching losses**, making it suitable for power supplies, inverters, and industrial applications requiring high voltage handling.
### **Features:**
- **900 V breakdown voltage** for high-voltage applications
- **Low RDS(on)** (500 mΩ max) for reduced conduction losses
- **Fast switching performance** for improved efficiency
- **Optimized gate charge (QG)** for reduced drive losses
- **High current capability** (7.5 A continuous)
- **Robust and reliable** due to CoolMOS™ C3 technology
- **TO-247 package** for effective thermal dissipation
This information is strictly based on the manufacturer's datasheet and technical documentation.
