CoolMOSTM Power Transistor The **IPP60R250CP** is a power MOSFET manufactured by **Infineon Technologies**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPP60R250CP
- **Transistor Type:** N-Channel
- **Technology:** CoolMOS™ CP
- **Drain-Source Voltage (VDS):** 600 V
- **Continuous Drain Current (ID):** 19 A (at 25°C)
- **Pulsed Drain Current (IDM):** 57 A
- **Power Dissipation (Ptot):** 230 W
- **Gate-Source Voltage (VGS):** ±20 V
- **On-Resistance (RDS(on)):** 250 mΩ (max) at VGS = 10 V
- **Total Gate Charge (Qg):** 50 nC (typical)
- **Input Capacitance (Ciss):** 1300 pF (typical)
- **Output Capacitance (Coss):** 110 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 30 pF (typical)
- **Turn-On Delay Time (td(on)):** 10 ns (typical)
- **Rise Time (tr):** 30 ns (typical)
- **Turn-Off Delay Time (td(off)):** 55 ns (typical)
- **Fall Time (tf):** 15 ns (typical)
- **Operating Junction Temperature (Tj):** -55°C to +150°C
- **Package:** TO-220
### **Descriptions:**
The **IPP60R250CP** is a high-voltage N-Channel MOSFET from Infineon’s **CoolMOS™ CP** series, optimized for high-efficiency power conversion applications. It features low on-state resistance and fast switching characteristics, making it suitable for switch-mode power supplies (SMPS), lighting, and industrial applications.
### **Features:**
- **High Voltage Capability (600 V)**
- **Low On-Resistance (250 mΩ max @ 10 V)**
- **Fast Switching Performance**
- **Optimized for High Efficiency**
- **Low Gate Charge (50 nC typical)**
- **Excellent Thermal Performance**
- **Avalanche Ruggedness**
- **TO-220 Package for Easy Mounting**
This information is based on Infineon’s official datasheet for the **IPP60R250CP**.
