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IPP05CN10N from INFINEON

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IPP05CN10N

Manufacturer: INFINEON

OptiMOS?2 Power-Transistor

Partnumber Manufacturer Quantity Availability
IPP05CN10N INFINEON 283 In Stock

Description and Introduction

OptiMOS?2 Power-Transistor The IPP05CN10N is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IPP05CN10N  
- **Transistor Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 50A  
- **Pulsed Drain Current (IDM):** 200A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-State Resistance (RDS(on)):** 0.05Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 500pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-220  

### **Descriptions & Features:**  
- Designed for high-power switching applications.  
- Low on-state resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance for efficient operation.  
- Robust thermal characteristics for high-power dissipation.  
- Suitable for motor control, power supplies, and DC-DC converters.  
- TO-220 package ensures easy mounting and heat dissipation.  

This information is based on Infineon's datasheet for the IPP05CN10N MOSFET.

Application Scenarios & Design Considerations

OptiMOS?2 Power-Transistor
Partnumber Manufacturer Quantity Availability
IPP05CN10N IFN 255 In Stock

Description and Introduction

OptiMOS?2 Power-Transistor The part **IPP05CN10N** is manufactured by **IFN (Infineon Technologies)**.  

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating (VCES):** 600V  
- **Current Rating (IC):** 10A  
- **Package:** TO-220  
- **Configuration:** Single IGBT with diode  
- **Switching Speed:** Fast switching capability  
- **Gate-Emitter Voltage (VGE):** ±20V  

### **Descriptions and Features:**  
- Designed for high-efficiency power switching applications.  
- Low saturation voltage (VCE(sat)).  
- Integrated freewheeling diode for improved reliability.  
- Suitable for motor drives, inverters, and power supplies.  
- Robust and reliable performance in industrial environments.  

For exact datasheet details, refer to **Infineon's official documentation**.

Application Scenarios & Design Considerations

OptiMOS?2 Power-Transistor

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