OptiMOS?3 Power-Transistor The IPP034N03LG is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPP034N03LG
- **Type:** N-channel Power MOSFET
- **Technology:** OptiMOS™
- **Drain-Source Voltage (VDS):** 30 V
- **Continuous Drain Current (ID):** 100 A (at 25°C)
- **Pulsed Drain Current (IDM):** 400 A
- **Power Dissipation (Ptot):** 200 W
- **Gate-Source Voltage (VGS):** ±20 V
- **On-Resistance (RDS(on)):** 3.4 mΩ (max at VGS = 10 V)
- **Threshold Voltage (VGS(th)):** 1.8 V (typical)
- **Input Capacitance (Ciss):** 3000 pF (typical)
- **Output Capacitance (Coss):** 900 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 100 pF (typical)
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-220
### **Descriptions and Features:**
- **Low On-Resistance:** Optimized for high efficiency in power applications.
- **High Current Capability:** Supports up to 100 A continuous drain current.
- **Fast Switching Performance:** Suitable for high-frequency switching applications.
- **OptiMOS™ Technology:** Provides superior power handling and thermal performance.
- **Avalanche Rated:** Robust design for reliable operation under harsh conditions.
- **Logic-Level Gate Drive:** Can be driven with lower gate voltages for ease of use.
- **Applications:** Used in DC-DC converters, motor control, power supplies, and automotive systems.
This information is based solely on the manufacturer's datasheet and technical documentation.
