CoolMOS Power Transistor The **IPI60R099CPA** is a power MOSFET manufactured by **Infineon Technologies**. Below are its specifications, descriptions, and features based on factual information:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPI60R099CPA
- **Technology:** CoolMOS™ C7
- **Category:** Power MOSFET (Superjunction)
- **Package:** TO-220
- **Polarity:** N-Channel
- **Drain-Source Voltage (VDS):** 600 V
- **Continuous Drain Current (ID):** 16 A (at 25°C)
- **Pulsed Drain Current (IDM):** 48 A
- **Power Dissipation (PD):** 125 W (at 25°C)
- **Gate-Source Voltage (VGS):** ±20 V
- **On-Resistance (RDS(on)):** 99 mΩ (max) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 3.5 V (typical)
- **Total Gate Charge (Qg):** 30 nC (typical)
- **Input Capacitance (Ciss):** 1100 pF (typical)
- **Output Capacitance (Coss):** 90 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 15 pF (typical)
- **Operating Temperature Range:** -55°C to +150°C
### **Description:**
- The **IPI60R099CPA** is a **600V N-channel CoolMOS™ C7 power MOSFET** designed for high-efficiency switching applications.
- It features **low conduction and switching losses**, making it suitable for **SMPS (Switched-Mode Power Supplies), PFC (Power Factor Correction), and industrial applications**.
- The **TO-220 package** provides good thermal performance and ease of mounting.
### **Key Features:**
- **Superjunction technology** for reduced losses.
- **Low RDS(on)** for improved efficiency.
- **Fast switching performance** for high-frequency applications.
- **High avalanche ruggedness** for reliability in harsh conditions.
- **Optimized gate charge** for better driving efficiency.
This information is based on Infineon's official datasheet for the **IPI60R099CPA**. For detailed application notes and testing conditions, refer to the manufacturer's documentation.
