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IPF105N03LG from infineon

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IPF105N03LG

Manufacturer: infineon

OptiMOS3 Power-Transistor

Partnumber Manufacturer Quantity Availability
IPF105N03LG infineon 2500 In Stock

Description and Introduction

OptiMOS3 Power-Transistor The **IPF105N03LG** is a power MOSFET manufactured by **Infineon Technologies**. Below are its specifications, descriptions, and features based on factual data:

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Type:** N-Channel MOSFET  
- **Technology:** OptiMOS™ 5  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 100A (at 25°C)  
- **Pulsed Drain Current (IDM):** 400A  
- **Power Dissipation (PD):** 333W (at 25°C)  
- **RDS(on) (Max):**  
  - 1.05 mΩ (at VGS = 10V, ID = 50A)  
  - 1.2 mΩ (at VGS = 4.5V, ID = 50A)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Threshold Voltage (VGS(th)):** 2.1V (typical)  
- **Input Capacitance (Ciss):** 5300 pF  
- **Output Capacitance (Coss):** 1000 pF  
- **Reverse Transfer Capacitance (Crss):** 150 pF  
- **Package:** TO-220  

### **Descriptions & Features:**  
- Designed for **high-efficiency power switching** applications.  
- **Low RDS(on)** for reduced conduction losses.  
- **Optimized for synchronous rectification** in DC-DC converters.  
- **Fast switching performance** for improved efficiency.  
- **Avalanche ruggedness** for enhanced reliability.  
- **Lead-free and RoHS compliant**.  

This MOSFET is commonly used in **power supplies, motor control, and battery management systems**.  

(Data sourced from Infineon's official documentation.)

Application Scenarios & Design Considerations

OptiMOS3 Power-Transistor

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