OptiMOS?2 Power-Transistor The **IPDH9N03LAG** is a power MOSFET manufactured by **Infineon Technologies**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDS):** 30V
- **Continuous Drain Current (ID):** 9A
- **Pulsed Drain Current (IDM):** 36A
- **Power Dissipation (PD):** 45W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):**
- 45mΩ (max) at VGS = 10V
- 55mΩ (max) at VGS = 4.5V
- **Threshold Voltage (VGS(th)):** 1.0V to 2.5V
- **Total Gate Charge (Qg):** 8.5nC (typical)
- **Input Capacitance (Ciss):** 600pF (typical)
- **Output Capacitance (Coss):** 180pF (typical)
- **Reverse Transfer Capacitance (Crss):** 60pF (typical)
- **Switching Speed:** Fast switching capability
- **Package:** TO-252 (DPAK)
### **Descriptions:**
- The **IPDH9N03LAG** is a **low-voltage N-Channel MOSFET** designed for high-efficiency power switching applications.
- It is optimized for **low on-state resistance (RDS(on))** and **fast switching performance**, making it suitable for DC-DC converters, motor control, and power management circuits.
- The **TO-252 (DPAK) package** provides good thermal performance and is suitable for surface-mount applications.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **High Current Handling:** Supports up to **9A continuous current**.
- **Fast Switching:** Suitable for high-frequency applications.
- **Low Gate Charge:** Enhances efficiency in switching applications.
- **Avalanche Energy Rated:** Provides robustness in harsh conditions.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
This information is based solely on the manufacturer's datasheet and technical documentation.
