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IPDH5N03LAG from INFINEON

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IPDH5N03LAG

Manufacturer: INFINEON

OptiMOS?2 Power-Transistor

Partnumber Manufacturer Quantity Availability
IPDH5N03LAG INFINEON 15000 In Stock

Description and Introduction

OptiMOS?2 Power-Transistor The IPDH5N03LAG is a power MOSFET manufactured by Infineon Technologies. Here are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 5A  
- **Pulsed Drain Current (IDM):** 20A  
- **Power Dissipation (PD):** 25W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.085Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V (min) to 2.5V (max)  
- **Input Capacitance (Ciss):** 300pF (typ)  
- **Output Capacitance (Coss):** 70pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)  
- **Switching Speed:** Fast switching performance  
- **Package:** TO-252 (DPAK)  

### **Descriptions & Features:**  
- Designed for **low-voltage, high-efficiency** power switching applications.  
- **Low on-resistance (RDS(on))** ensures minimal conduction losses.  
- **Fast switching** capability for improved efficiency in DC-DC converters and motor control.  
- **Avalanche ruggedness** for enhanced reliability in harsh conditions.  
- **Lead-free and RoHS compliant** for environmental safety.  
- Suitable for **battery management, power supplies, and automotive applications**.  

This information is based on Infineon's datasheet for the IPDH5N03LAG MOSFET.

Application Scenarios & Design Considerations

OptiMOS?2 Power-Transistor

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