Low Voltage MOSFETs The IPD13N03LA is a power MOSFET manufactured by INFINCOE. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDS):** 30V
- **Continuous Drain Current (ID):** 13A
- **Pulsed Drain Current (IDM):** 52A
- **Power Dissipation (PD):** 40W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.045Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 1.0V to 2.5V
- **Input Capacitance (Ciss):** 600pF (typical)
- **Output Capacitance (Coss):** 180pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Operating Junction Temperature (TJ):** -55°C to +175°C
### **Descriptions:**
- The IPD13N03LA is an N-channel enhancement-mode power MOSFET designed for high-efficiency switching applications.
- It features low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.
- The device is housed in a TO-252 (DPAK) package, providing good thermal performance and ease of mounting.
### **Features:**
- **Low On-Resistance (RDS(on)):** Enhances power efficiency.
- **Fast Switching Speed:** Reduces switching losses.
- **High Current Handling Capability:** Supports up to 13A continuous drain current.
- **Avalanche Energy Rated:** Ensures robustness in high-energy environments.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
This information is strictly based on the manufacturer's datasheet and technical documentation.
