OptiMOS®2 The IPD05N03LB is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Type:** N-Channel MOSFET
- **Technology:** TrenchMOS
- **Drain-Source Voltage (VDS):** 30V
- **Continuous Drain Current (ID):** 5A
- **Pulsed Drain Current (IDM):** 20A
- **Power Dissipation (PD):** 25W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.05Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 1V (min), 2.5V (max)
- **Total Gate Charge (Qg):** 8nC (typ)
- **Input Capacitance (Ciss):** 500pF (typ)
- **Output Capacitance (Coss):** 150pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Operating Temperature Range:** -55°C to +150°C
### **Descriptions:**
- The IPD05N03LB is a low-voltage N-Channel MOSFET designed for high-efficiency power switching applications.
- It is optimized for low on-resistance and fast switching performance.
- Suitable for DC-DC converters, motor control, and load switching applications.
### **Features:**
- **Low On-Resistance (RDS(on)):** Enhances efficiency in power applications.
- **Fast Switching Speed:** Improves performance in high-frequency circuits.
- **Low Gate Charge (Qg):** Reduces switching losses.
- **Avalanche Energy Rated:** Ensures robustness in inductive load conditions.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
This information is based on Infineon's datasheet for the IPD05N03LB. For detailed application notes, refer to the official documentation.
