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IPD03N03LBG from INFINEOB

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IPD03N03LBG

Manufacturer: INFINEOB

OptiMOS 2 Power-Transistor

Partnumber Manufacturer Quantity Availability
IPD03N03LBG INFINEOB 10000 In Stock

Description and Introduction

OptiMOS 2 Power-Transistor The IPD03N03LBG is a power MOSFET manufactured by INFINEON. Here are its key specifications, descriptions, and features:

### **Specifications:**
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 3A  
- **RDS(on) (Max):** 0.07Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 1.4W  
- **Package:** SOT-223  

### **Descriptions:**
- Designed for low-voltage, high-efficiency switching applications.  
- Suitable for power management in portable electronics, DC-DC converters, and load switching.  

### **Features:**
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Enhanced thermal performance due to SOT-223 package.  
- Logic-level compatible gate drive.  

For detailed datasheet information, refer to INFINEON's official documentation.

Application Scenarios & Design Considerations

OptiMOS 2 Power-Transistor
Partnumber Manufacturer Quantity Availability
IPD03N03LBG Infineon 25200 In Stock

Description and Introduction

OptiMOS 2 Power-Transistor The IPD03N03LBG is a power MOSFET manufactured by Infineon. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IPD03N03LBG  
- **Transistor Type:** N-Channel MOSFET  
- **Technology:** OptiMOS™  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **RDS(on) (Max):** 3.0 mΩ at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 50W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- The IPD03N03LBG is a low-voltage N-Channel MOSFET designed for high-efficiency power switching applications.  
- It is part of Infineon’s OptiMOS™ family, optimized for low conduction and switching losses.  
- Suitable for applications such as DC-DC converters, motor control, and power management.  

### **Features:**  
- **Low On-Resistance (RDS(on)):** Minimizes conduction losses.  
- **High Current Handling:** Supports up to 30A continuous drain current.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche-Rugged:** Enhanced reliability under high-energy conditions.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This information is based strictly on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

OptiMOS 2 Power-Transistor

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