Low Voltage MOSFETs The IPB09N03LA is a power MOSFET manufactured by Infineon. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPB09N03LA
- **Type:** N-Channel Power MOSFET
- **Package:** TO-263 (D2PAK)
- **Drain-Source Voltage (VDS):** 30V
- **Continuous Drain Current (ID):** 90A
- **Pulsed Drain Current (IDM):** 360A
- **Power Dissipation (PD):** 150W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 3.5mΩ (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 1.5V (min) - 2.5V (max)
- **Total Gate Charge (Qg):** 60nC (typ)
- **Input Capacitance (Ciss):** 3000pF (typ)
- **Output Capacitance (Coss):** 800pF (typ)
- **Reverse Transfer Capacitance (Crss):** 200pF (typ)
- **Operating Temperature Range:** -55°C to +175°C
### **Descriptions:**
The IPB09N03LA is a high-performance N-Channel MOSFET designed for low-voltage, high-current applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in automotive, industrial, and consumer electronics.
### **Features:**
- **Low RDS(on):** Ensures minimal conduction losses.
- **High Current Capability:** Supports up to 90A continuous drain current.
- **Fast Switching:** Optimized for high-frequency applications.
- **Avalanche Rated:** Robust against energy spikes.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
- **Low Gate Charge:** Reduces switching losses.
This information is based strictly on the manufacturer's datasheet and technical documentation.
