CoolMos Power Transistor The **IPA50R250CP** is a power MOSFET manufactured by **Infineon Technologies**. Below are its specifications, descriptions, and features based on the available knowledge base:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPA50R250CP
- **Technology:** CoolMOS™ CP (CoolMOS Power Transistor)
- **Category:** Power MOSFET
- **Package:** TO-220
- **Polarity:** N-Channel
- **Drain-Source Voltage (VDS):** 500 V
- **Continuous Drain Current (ID):** 8.5 A
- **Pulsed Drain Current (IDM):** 34 A
- **Power Dissipation (Ptot):** 125 W
- **Gate-Source Voltage (VGS):** ±20 V
- **On-Resistance (RDS(on)):** 250 mΩ (max) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 3.5 V (typical)
- **Input Capacitance (Ciss):** 750 pF (typical)
- **Output Capacitance (Coss):** 60 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 15 pF (typical)
- **Turn-On Delay Time (td(on)):** 15 ns (typical)
- **Turn-Off Delay Time (td(off)):** 50 ns (typical)
- **Operating Temperature Range:** -55°C to +150°C
### **Descriptions:**
- The **IPA50R250CP** is a high-voltage N-Channel MOSFET designed for efficient power switching applications.
- It is part of Infineon’s **CoolMOS™ CP** series, optimized for low conduction and switching losses.
- Suitable for **SMPS (Switched-Mode Power Supplies), lighting, motor control, and industrial applications**.
### **Features:**
- **Low On-Resistance (RDS(on))** for reduced conduction losses.
- **Fast Switching Performance** for high-frequency applications.
- **High Avalanche Ruggedness** for improved reliability.
- **Optimized Gate Charge (QG)** for better efficiency.
- **TO-220 Package** for easy mounting and thermal management.
This information is based strictly on the manufacturer's datasheet and technical documentation.
