OptiMOSTM3 Power-Transistor The IPA045N10N3G is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IPA045N10N3G
- **Technology:** OptiMOS™ 3
- **Transistor Type:** N-Channel
- **Drain-Source Voltage (VDS):** 100V
- **Continuous Drain Current (ID):** 45A (at 25°C)
- **Pulsed Drain Current (IDM):** 180A
- **Power Dissipation (PD):** 125W (at 25°C)
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 4.5mΩ (max at VGS = 10V)
- **Threshold Voltage (VGS(th)):** 2.3V (min), 3.5V (max)
- **Input Capacitance (Ciss):** 1800pF (typical)
- **Output Capacitance (Coss):** 300pF (typical)
- **Reverse Transfer Capacitance (Crss):** 60pF (typical)
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-220
### **Description:**
The IPA045N10N3G is a high-performance N-channel MOSFET from Infineon’s OptiMOS™ 3 series, designed for efficient power switching applications. It offers low on-resistance and high current capability, making it suitable for DC-DC converters, motor control, and power management systems.
### **Features:**
- **Low RDS(on):** Enhances efficiency and reduces conduction losses.
- **High Current Handling:** Supports up to 45A continuous drain current.
- **Fast Switching:** Optimized for high-frequency applications.
- **Robust Design:** High thermal and electrical reliability.
- **Avalanche Rated:** Ensures ruggedness in harsh conditions.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
This information is based on Infineon's official datasheet for the IPA045N10N3G. For detailed performance curves and application notes, refer to the manufacturer's documentation.
