IC Phoenix logo

Home ›  I  › I15 > IKW40T120

IKW40T120 from INFINEON

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

IKW40T120

Manufacturer: INFINEON

IGBTs & DuoPacks

Partnumber Manufacturer Quantity Availability
IKW40T120 INFINEON 20 In Stock

Description and Introduction

IGBTs & DuoPacks The IKW40T120 is a power semiconductor device manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating (VCES):** 1200V  
- **Current Rating (IC @25°C):** 40A  
- **Current Rating (IC @100°C):** 20A  
- **Power Dissipation (Ptot):** 200W  
- **Gate-Emitter Voltage (VGE):** ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 1.85V (typical)  
- **Switching Speed:** Fast switching with low losses  
- **Package:** TO-247  
- **Operating Temperature Range:** -40°C to +150°C  

### **Descriptions:**  
- The IKW40T120 is a high-voltage IGBT designed for power switching applications.  
- It is optimized for high efficiency and reliability in industrial and automotive applications.  
- The device features low conduction and switching losses, making it suitable for high-frequency applications.  

### **Features:**  
- **Low Saturation Voltage:** Ensures reduced conduction losses.  
- **Fast Switching:** Improves efficiency in high-frequency circuits.  
- **High Current Capability:** Supports high-power applications.  
- **Temperature Stability:** Maintains performance across a wide temperature range.  
- **Robust Design:** Suitable for harsh environments.  

This information is based solely on Infineon's official datasheet for the IKW40T120.

Partnumber Manufacturer Quantity Availability
IKW40T120 INFION 120 In Stock

Description and Introduction

IGBTs & DuoPacks The IKW40T120 is a power semiconductor device manufactured by Infineon Technologies (INFINEON). Here are the key specifications, descriptions, and features:

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating (VCES):** 1200V  
- **Current Rating (IC @25°C):** 40A  
- **Current Rating (IC @100°C):** 24A  
- **Power Dissipation (Ptot):** 200W  
- **Gate-Emitter Voltage (VGE):** ±20V  
- **Switching Speed:** Fast switching with low losses  
- **Package:** TO-247  

### **Descriptions:**  
- Designed for high-efficiency power switching applications.  
- Suitable for motor drives, inverters, and industrial power supplies.  
- Features a trench and field-stop technology for improved performance.  

### **Features:**  
- **Low Saturation Voltage (VCE(sat)):** Reduces conduction losses.  
- **High Short-Circuit Withstand Capability:** Enhances reliability.  
- **Temperature Stability:** Optimized for high-temperature operation.  
- **Fast Switching:** Minimizes switching losses.  
- **Robust Construction:** Ensures durability in harsh environments.  

This device is optimized for applications requiring high power density and efficiency.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips