1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. The **IKB03N120H2** is a power semiconductor device manufactured by **Infineon Technologies**. Below are the factual specifications, descriptions, and features based on available data:  

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IKB03N120H2  
- **Device Type:** IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating (V_CES):** 1200V  
- **Current Rating (I_C @25°C):** 3A  
- **Current Rating (I_C @100°C):** 2A  
- **Power Dissipation (P_tot):** 50W  
- **Gate-Emitter Voltage (V_GE):** ±20V  
- **Collector-Emitter Saturation Voltage (V_CE(sat)):** 1.85V (typical)  
- **Switching Speed:** Fast switching characteristics  
- **Package:** TO-263 (D2PAK)  

### **Descriptions & Features:**  
- Designed for **high-voltage, high-efficiency switching applications**.  
- **Low conduction and switching losses**, improving energy efficiency.  
- **Fast switching performance**, suitable for **motor drives, inverters, and power supplies**.  
- **Temperature-stable operation** with a wide operating range.  
- **Robust and reliable construction**, ensuring long-term performance in demanding environments.  

For exact performance curves and application-specific details, refer to the official **Infineon datasheet**.

1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.