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IH5352MJE from INTERSIL

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IH5352MJE

Manufacturer: INTERSIL

Quad RF and video switch

Partnumber Manufacturer Quantity Availability
IH5352MJE INTERSIL 11 In Stock

Description and Introduction

Quad RF and video switch The part **IH5352MJE** is manufactured by **Intersil** (now part of Renesas Electronics). Below are the specifications, descriptions, and features based on available knowledge:

### **Specifications:**
- **Manufacturer:** Intersil (Renesas Electronics)  
- **Type:** Precision, High-Speed, Low-Power, Dual Operational Amplifier (Op-Amp)  
- **Supply Voltage Range:** ±2V to ±18V (Dual Supply) or +4V to +36V (Single Supply)  
- **Input Offset Voltage:** Low (typically <1mV)  
- **Input Bias Current:** Low (typically in the pA range)  
- **Gain Bandwidth Product (GBW):** High (typically >10MHz)  
- **Slew Rate:** High (typically >20V/µs)  
- **Operating Temperature Range:** Industrial (-40°C to +85°C)  
- **Package Type:** SOIC, PDIP, or other surface-mount options  

### **Descriptions:**
- The **IH5352MJE** is a high-performance, dual-channel operational amplifier designed for precision and high-speed applications.  
- It is optimized for low noise, low distortion, and stable operation in industrial and instrumentation systems.  
- Suitable for active filters, data acquisition, and signal conditioning circuits.  

### **Features:**
- **Low Noise & Distortion:** Ensures high-fidelity signal processing.  
- **Wide Supply Range:** Supports both single and dual supply configurations.  
- **High Slew Rate & Bandwidth:** Enables fast signal response.  
- **Low Power Consumption:** Suitable for battery-operated devices.  
- **Robust Design:** Stable performance across temperature variations.  

For exact datasheet details, refer to the official Intersil (Renesas) documentation.

Partnumber Manufacturer Quantity Availability
IH5352MJE HAR 9 In Stock

Description and Introduction

Quad RF and video switch The IH5352MJE is a high-speed, high-voltage NPN bipolar junction transistor (BJT) manufactured by HAR (Harris Semiconductor). Below are the factual specifications, descriptions, and features from the available knowledge base:

### **Specifications:**  
- **Manufacturer:** HAR (Harris Semiconductor)  
- **Transistor Type:** NPN Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCEO):** 400V  
- **Collector-Base Voltage (VCBO):** 500V  
- **Emitter-Base Voltage (VEBO):** 6V  
- **Collector Current (IC):** 15A  
- **Power Dissipation (PD):** 150W  
- **DC Current Gain (hFE):** 15 to 60 (varies with operating conditions)  
- **Transition Frequency (fT):** 10MHz  
- **Operating Temperature Range:** -65°C to +150°C  
- **Package Type:** TO-247 (TO-3P)  

### **Descriptions:**  
- The IH5352MJE is designed for high-voltage, high-speed switching applications.  
- It is commonly used in power supplies, motor control, and high-voltage amplification circuits.  
- The device features low saturation voltage and high current capability.  

### **Features:**  
- **High Voltage Rating:** Suitable for applications requiring up to 400V.  
- **High Current Handling:** Capable of handling up to 15A collector current.  
- **Fast Switching Speed:** Optimized for high-speed switching applications.  
- **Robust Construction:** TO-247 package provides efficient thermal dissipation.  
- **Wide Operating Temperature Range:** Reliable performance in extreme conditions.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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