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IDT72V3660L75PF from IDT

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IDT72V3660L75PF

Manufacturer: IDT

3.3 VOLT HIGH-DENSITY SUPERSYNC? II 36-BIT FIFO

Partnumber Manufacturer Quantity Availability
IDT72V3660L75PF IDT 226 In Stock

Description and Introduction

3.3 VOLT HIGH-DENSITY SUPERSYNC? II 36-BIT FIFO The IDT72V3660L75PF is a high-speed, low-power 3.3V synchronous dual-port static RAM (SRAM) manufactured by IDT (Integrated Device Technology). Below are the key specifications, descriptions, and features:

### **Specifications:**
- **Density:** 2,359,296 bits (organized as 65,536 words × 36 bits)  
- **Voltage Supply:** 3.3V ±10%  
- **Speed:** 75 ns access time  
- **Operating Current:** 200 mA (typical)  
- **Standby Current:** 5 mA (typical)  
- **Package:** 100-pin TQFP (Thin Quad Flat Pack)  
- **Temperature Range:** Commercial (0°C to +70°C)  

### **Descriptions:**
- The IDT72V3660L75PF is a synchronous dual-port RAM with independent read/write ports, allowing simultaneous access from both ports.  
- It supports high-speed data transfers with a 75 ns access time, making it suitable for high-performance applications.  
- The device is designed for low power consumption, featuring a standby mode to reduce power usage when inactive.  

### **Features:**
- **Dual-Port Operation:** Independent left and right ports for simultaneous access.  
- **Synchronous Interface:** Supports pipelined and flow-through operation modes.  
- **Byte Control:** Individual byte enables for write operations.  
- **Bus Matching:** On-chip arbitration logic prevents contention during simultaneous access.  
- **Low Power:** Optimized for power-sensitive applications with standby mode.  
- **3.3V Operation:** Compatible with low-voltage systems.  
- **Industrial-Grade Options:** Available in extended temperature ranges (not applicable to the L75PF variant).  

This device is commonly used in networking, telecommunications, and data buffering applications where high-speed, concurrent data access is required.  

(Note: Always refer to the official datasheet for detailed technical specifications and application guidelines.)

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