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IC41LV44052-50J

Manufacturer: ISSI

4Mx4 bit Dynamic RAM with Fast Page Mode

Partnumber Manufacturer Quantity Availability
IC41LV44052-50J,IC41LV4405250J ISSI 1083 In Stock

Description and Introduction

4Mx4 bit Dynamic RAM with Fast Page Mode The IC41LV44052-50J is a 4M x 4-bit (16Mbit) Low Voltage CMOS Synchronous DRAM (SDRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Density:** 16Mbit (4M x 4-bit)  
- **Organization:** 4,194,304 words x 4 bits  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Speed Grade:** -50J (50ns access time)  
- **Package:** 50-pin TSOP II (400mil width)  
- **Refresh Cycles:** 4,096 refresh cycles every 64ms  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  

### **Descriptions:**
- **Type:** Synchronous DRAM (SDRAM)  
- **Interface:** Fully synchronous with a single 3.3V power supply  
- **Burst Length:** Programmable (1, 2, 4, 8, or full-page)  
- **CAS Latency:** Programmable (2 or 3 cycles)  
- **Auto Refresh & Self Refresh Modes**  
- **Burst Read & Write Operations**  

### **Features:**
- **Low Power Consumption:** Standby and active power-saving modes  
- **Pipelined Operation:** Allows concurrent row and column addressing  
- **Auto Precharge:** Supports auto precharge for efficient operation  
- **Burst Termination:** Controlled by burst stop command or new read/write command  
- **Compatible with JEDEC Standards:** Meets industry-standard SDRAM specifications  

This SDRAM is commonly used in applications requiring high-speed data access, such as networking equipment, telecommunications, and embedded systems.  

Would you like additional details on any specific aspect?

Application Scenarios & Design Considerations

4Mx4 bit Dynamic RAM with Fast Page Mode

Alternative Part Number

  • IS41LV44052-50J --: Same 4Mbit LVTTL asynchronous DRAM family from ISSI, pin-compatible 50ns SOJ package, direct drop-in replacement.
  • AS4C4M16SA-5TCN --: 4M x 16 asynchronous DRAM with 50ns speed grade in TSOP/SOJ form factor, widely used as a second-source for this density.
  • MT4C4001JC-5 --: 4Mbit asynchronous DRAM with 50ns access time, functionally equivalent legacy alternative for 4M x 1/4M x 4 organizations.
  • IS61LV25616AL-10TL --: Same manufacturer family, 256Kx16 low-voltage asynchronous SRAM with comparable 44-pin TSOP package and access-time options, suitable as a functional drop-in for the 50ns device.
  • CY7C1041CV33-10ZXI --: Cypress 256Kx16 asynchronous SRAM in 44-pin TSOP-II with 3.3V operation and 10ns speed grade, widely used as a cross-reference replacement for ISSI 44-pin SRAMs.

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