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IC41LV44002A-50T from CSI

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IC41LV44002A-50T

Manufacturer: CSI, ICSI

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Partnumber Manufacturer Quantity Availability
IC41LV44002A-50T,IC41LV44002A50T CSI, ICSI 1112 In Stock

Description and Introduction

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The IC41LV44002A-50T is a 4M x 4-bit (16Mbit) CMOS synchronous DRAM manufactured by CSI (California Scientific Instruments). Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Organization:** 4M x 4-bit (16Mbit)  
- **Speed:** 50ns (CL=3)  
- **Voltage Supply:** 3.3V ± 0.3V  
- **Package:** 44-pin TSOP (Thin Small Outline Package)  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Refresh Cycles:** 4096 refresh cycles every 64ms  
- **Burst Length:** 1, 2, 4, 8, or full page  
- **CAS Latency (CL):** 2 or 3 (programmable)  
- **Interface:** LVTTL-compatible  

### **Descriptions:**  
- The IC41LV44002A-50T is a high-speed synchronous DRAM designed for applications requiring high bandwidth and low power consumption.  
- It supports burst read and write operations with programmable burst lengths.  
- The device operates with a single 3.3V power supply and is compatible with LVTTL input/output levels.  

### **Features:**  
- **Synchronous Operation:** Clock-controlled commands and data transfers.  
- **Auto Refresh & Self Refresh:** Supports power-saving modes.  
- **Programmable Burst Length:** 1, 2, 4, 8, or full-page bursts.  
- **CAS Latency Options:** 2 or 3 cycles.  
- **Low Power Consumption:** Standby and power-down modes available.  
- **Single 3.3V Power Supply:** Reduces system power requirements.  
- **LVTTL-Compatible I/O:** Ensures compatibility with standard logic levels.  

This information is based solely on the manufacturer's specifications for the IC41LV44002A-50T.

Application Scenarios & Design Considerations

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Alternative Part Number

  • IS41LV44002A-50T --: ISSI acquired the CSI DRAM product line; this is the direct equivalent 4Mbit EDO DRAM in the same 50ns speed grade and package.
  • AS4C4M4SA-50TCN --: Alliance Memory specializes in legacy DRAM replacements; this 4Mx4 EDO DRAM matches the 50ns access time and TSOP package.
  • MT4C4002DJ-5 --: Micron 4Mbit EDO DRAM with comparable 50ns speed and organization, usable as a functional substitute with pinout verification.
  • AS4C4M16SA-5TCN --: Alliance Memory specializes in legacy DRAM replacements; this 4Mbit EDO DRAM offers comparable organization, 50ns access time, and TSOP II package compatibility.
  • MT4C4001DJ-5 --: Micron 4Mbit EDO DRAM with 50ns speed grade and similar 4M x 1 organization, suitable as a functional substitute where timing and pinout match.

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