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HBAT-540B-TR1G from AVAGO

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HBAT-540B-TR1G

Manufacturer: AVAGO

High Performance Schottky Diode for Transient Suppression

Partnumber Manufacturer Quantity Availability
HBAT-540B-TR1G,HBAT540BTR1G AVAGO 100 In Stock

Description and Introduction

High Performance Schottky Diode for Transient Suppression The HBAT-540B-TR1G is a high-performance RF transistor manufactured by AVAGO (now part of Broadcom). Here are its key specifications:

- **Type**: NPN Silicon Bipolar Transistor  
- **Application**: RF Amplifier  
- **Frequency Range**: Up to 5.5 GHz  
- **Power Output**: 1.5 W (typical)  
- **Gain**: 13 dB (typical at 1.9 GHz)  
- **Voltage (Vce)**: 12 V  
- **Current (Ic)**: 100 mA  
- **Package**: SOT-89  
- **Operating Temperature**: -40°C to +85°C  

These specifications are based on AVAGO's datasheet for the HBAT-540B-TR1G.

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