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HAT2266H from RENESAS

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16.113ms

HAT2266H

Manufacturer: RENESAS

Silicon N Channel Power MOS FET Power Switching

Partnumber Manufacturer Quantity Availability
HAT2266H RENESAS 1000 In Stock

Description and Introduction

Silicon N Channel Power MOS FET Power Switching The **HAT2266H** is a high-performance electronic component designed for applications requiring efficient power management and signal amplification. As a versatile semiconductor device, it integrates advanced features to deliver reliable performance in various circuits, including power supplies, audio systems, and communication equipment.  

Engineered with precision, the HAT2266H offers low power dissipation and high efficiency, making it suitable for energy-sensitive designs. Its robust construction ensures stability under varying load conditions, while its compact form factor allows seamless integration into space-constrained PCB layouts.  

Key specifications of the HAT2266H include a wide operating voltage range, fast switching capabilities, and excellent thermal management properties. These attributes contribute to its suitability for both industrial and consumer electronics, where durability and consistent performance are critical.  

Whether used in voltage regulation, signal conditioning, or amplification circuits, the HAT2266H provides designers with a dependable solution for optimizing system performance. Its compatibility with modern circuit architectures further enhances its appeal in evolving technological applications.  

For engineers and developers seeking a high-quality component with proven reliability, the HAT2266H represents a practical choice for enhancing efficiency and functionality in electronic designs.

Partnumber Manufacturer Quantity Availability
HAT2266H SANYO 2500 In Stock

Description and Introduction

Silicon N Channel Power MOS FET Power Switching The part HAT2266H is manufactured by SANYO. It is a PNP silicon epitaxial planar transistor designed for high-speed switching applications. Key specifications include:

- **Collector-Base Voltage (VCBO):** -50V  
- **Collector-Emitter Voltage (VCEO):** -50V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -2A  
- **Total Power Dissipation (PT):** 1W  
- **Junction Temperature (Tj):** 150°C  
- **Storage Temperature (Tstg):** -55°C to +150°C  
- **Transition Frequency (fT):** 100MHz (min)  

The transistor is housed in a TO-92MOD package.  

(Source: SANYO datasheet for HAT2266H)

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