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HAT2217C-EL-E from RENESAS

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HAT2217C-EL-E

Manufacturer: RENESAS

Silicon N Channel MOS FET Power Switching

Partnumber Manufacturer Quantity Availability
HAT2217C-EL-E,HAT2217CELE RENESAS 5990 In Stock

Description and Introduction

Silicon N Channel MOS FET Power Switching # Introduction to the HAT2217C-EL-E Electronic Component  

The **HAT2217C-EL-E** is a high-performance electronic component designed for efficient power management in modern electronic circuits. This device is commonly used in applications requiring voltage regulation, power conversion, or signal conditioning, offering reliable performance in compact form factors.  

Engineered with precision, the HAT2217C-EL-E features low power dissipation and high efficiency, making it suitable for energy-sensitive applications. Its robust design ensures stable operation under varying load conditions, while its thermal management capabilities enhance durability in demanding environments.  

Key characteristics of the HAT2217C-EL-E include a wide input voltage range, fast response times, and minimal ripple, ensuring consistent power delivery. These attributes make it ideal for use in consumer electronics, industrial automation, and automotive systems where reliability and efficiency are critical.  

The component is designed for easy integration into PCB layouts, supporting surface-mount technology (SMT) for streamlined manufacturing processes. Its compliance with industry standards further underscores its suitability for professional and commercial applications.  

For engineers and designers seeking a dependable power management solution, the HAT2217C-EL-E represents a balanced combination of performance, efficiency, and durability. Its technical specifications and application versatility make it a valuable component in modern electronic designs.

Partnumber Manufacturer Quantity Availability
HAT2217C-EL-E,HAT2217CELE 92 In Stock

Description and Introduction

Silicon N Channel MOS FET Power Switching The part **HAT2217C-EL-E** is manufactured by **Renesas Electronics**. Below are its key specifications:

1. **Type**: Dual N-Channel MOSFET  
2. **Voltage Rating (VDS)**: 30V  
3. **Current Rating (ID)**: 6A (per channel)  
4. **Power Dissipation (PD)**: 2W  
5. **On-Resistance (RDS(on))**: 50mΩ (max) at VGS = 10V  
6. **Gate Threshold Voltage (VGS(th))**: 1V (min) to 2.5V (max)  
7. **Package**: SOP-8 (Small Outline Package)  
8. **Operating Temperature Range**: -55°C to +150°C  

These specifications are based on Renesas' datasheet for the HAT2217C-EL-E MOSFET. For exact performance characteristics, refer to the official documentation.

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