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HAT2114RJ from RENESAS

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16.006ms

HAT2114RJ

Manufacturer: RENESAS

Silicon N Channel Power MOS FET High Speed Power Switching

Partnumber Manufacturer Quantity Availability
HAT2114RJ RENESAS 30000 In Stock

Description and Introduction

Silicon N Channel Power MOS FET High Speed Power Switching The part **HAT2114RJ** is manufactured by **Renesas**.  

Key specifications:  
- **Type**: Power MOSFET  
- **Package**: TO-252 (DPAK)  
- **Voltage Rating (VDS)**: 40V  
- **Current Rating (ID)**: 60A  
- **Power Dissipation (PD)**: 50W  
- **RDS(on) (Max)**: 4.5mΩ @ VGS = 10V  
- **Gate Threshold Voltage (VGS(th))**: 1V (Min), 2.5V (Max)  
- **Operating Temperature Range**: -55°C to +150°C  

This MOSFET is designed for high-efficiency power switching applications.  

(Source: Renesas datasheet for HAT2114RJ)

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