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HAT2114R from HITACHI

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15.625ms

HAT2114R

Manufacturer: HITACHI

Silicon N Channel Power MOS FET High Speed Power Switching

Partnumber Manufacturer Quantity Availability
HAT2114R HITACHI 300 In Stock

Description and Introduction

Silicon N Channel Power MOS FET High Speed Power Switching The part **HAT2114R** is manufactured by **HITACHI**.  

**Specifications:**  
- **Type:** PNP Transistor  
- **Material:** Silicon (Si)  
- **Maximum Collector-Base Voltage (VCBO):** -50V  
- **Maximum Collector-Emitter Voltage (VCEO):** -50V  
- **Maximum Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -2A  
- **Power Dissipation (PC):** 1W  
- **DC Current Gain (hFE):** 60-320  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-220  

This information is based on the manufacturer's datasheet.

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