IC Phoenix logo

Home ›  H  › H4 > HAT1126RJ-EL-E

HAT1126RJ-EL-E from RENESAS

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

HAT1126RJ-EL-E

Manufacturer: RENESAS

Silicon P Channel Power MOS FET High Speed Power Switching

Partnumber Manufacturer Quantity Availability
HAT1126RJ-EL-E,HAT1126RJELE RENESAS 128 In Stock

Description and Introduction

Silicon P Channel Power MOS FET High Speed Power Switching The part **HAT1126RJ-EL-E** is manufactured by **Renesas**.  

Here are its specifications:  
- **Type**: Power MOSFET  
- **Configuration**: Single N-Channel  
- **Drain-Source Voltage (VDSS)**: 30V  
- **Continuous Drain Current (ID)**: 30A  
- **RDS(on) (Max)**: 6.5mΩ @ 10V, 8.5mΩ @ 4.5V  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Power Dissipation (PD)**: 2.5W  
- **Package**: SOP-8  
- **Operating Temperature Range**: -55°C to +150°C  

This information is based on Renesas' product documentation.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips