Very low Power SDRAM optimized for battery-powered, handheld applications **Manufacturer:** INFINEON
**Part Number:** HYE18L256160BF-7.5
**Specifications:**
- **Memory Type:** SDRAM (Synchronous Dynamic Random-Access Memory)
- **Density:** 256 Mbit
- **Organization:** 16M x 16 (16 Meg words x 16 bits)
- **Voltage Supply:** 3.3V
- **Speed Grade:** 7.5ns (CL=3)
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package:** 54-pin TSOP-II (Thin Small Outline Package)
- **Refresh Cycles:** 4096 refresh cycles every 64ms
- **Burst Length:** Programmable (1, 2, 4, 8, or full page)
- **Interface:** LVTTL (Low Voltage TTL)
**Features:**
- Fully synchronous operation with a single 3.3V power supply
- Internal pipelined operation for high-speed data transfer
- Auto Refresh (CBR) and Self Refresh modes
- Programmable CAS Latency (2 or 3)
- Burst read and write operations
- Supports sequential and interleaved burst modes
- Compatible with JEDEC standards
**Descriptions:**
The HYE18L256160BF-7.5 is a high-performance 256Mbit SDRAM module designed for applications requiring high-speed data access. It is optimized for use in networking, telecommunications, and computing systems where fast and reliable memory performance is critical. The device operates at a clock frequency of up to 133MHz (7.5ns access time) and supports various burst modes for efficient data handling.
(Note: Specifications and features are based on standard INFINEON SDRAM datasheets; exact details may vary.)
