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HYB514400BJ-60 from HY

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HYB514400BJ-60

Manufacturer: HY, SIEMENS

1M x 4-Bit Dynamic RAM

Partnumber Manufacturer Quantity Availability
HYB514400BJ-60,HYB514400BJ60 HY, SIEMENS 1540 In Stock

Description and Introduction

1M x 4-Bit Dynamic RAM The HYB514400BJ-60 is a DRAM module manufactured by Infineon Technologies (formerly under the HY brand). Here are its specifications, descriptions, and features:

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 128Mbit (16M x 8)  
- **Organization:** 16 Meg x 8 (2M x 8 x 8 banks)  
- **Speed:** 60ns (6ns access time)  
- **Voltage:** 3.3V ± 0.3V  
- **Package:** 54-pin TSOP-II (400mil)  
- **Refresh:** 4096 cycles/64ms  
- **Burst Length:** 1, 2, 4, 8, or full page  
- **CAS Latency:** 2 or 3 (programmable)  

### **Descriptions:**  
- Designed for high-performance applications requiring fast data transfer.  
- Supports auto-refresh and self-refresh modes.  
- Fully compatible with JEDEC standards for SDRAM.  

### **Features:**  
- **Synchronous Operation:** Clock-controlled for precise timing.  
- **Burst Mode Support:** Enhances data transfer efficiency.  
- **Programmable Burst Length:** Configurable for different applications.  
- **Low Power Consumption:** Optimized for 3.3V operation.  
- **Bank Management:** 8 internal banks for efficient memory access.  

This module was commonly used in older computing systems, networking devices, and embedded applications.

Application Scenarios & Design Considerations

1M x 4-Bit Dynamic RAM

Alternative Part Number

  • AS4C1M16S-60TCN --: 1M x 16-bit 60ns asynchronous DRAM in the same SOJ package class, widely used as a drop-in replacement for legacy 4Mbit DRAMs.
  • IS41C16256-60T --: 256K x 16-bit 60ns fast page mode DRAM with compatible supply and timing, suitable substitute for the HYB514400BJ-60.
  • MT4C16256C-60 --: 256K x 16-bit 60ns DRAM with similar organization and access time, commonly cross-referenced for legacy 4Mbit parts.
  • MT4C4001JC-6 --: 4Mbit DRAM in the same 4001 organization with 60ns access time, a common drop-in replacement for HYB514400 series.
  • KM44C4000J-6 --: 4Mbit CMOS DRAM with comparable 60ns speed grade and pinout, widely used as an alternative to Siemens HYB514400 devices.
  • TMS44C4000-60 --: 4Mbit DRAM offering equivalent density, organization and 60ns timing, suitable as a functional substitute.

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