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HYB25D256800BT-7 from INFINEON

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HYB25D256800BT-7

Manufacturer: INFINEON, HY

256 Mbit Double Data Rate SDRAM
Partnumber Manufacturer Quantity Availability
HYB25D256800BT-7,HYB25D256800BT7 INFINEON, HY 8056 In Stock

Description and Introduction

256 Mbit Double Data Rate SDRAM The HYB25D256800BT-7 is a synchronous DRAM (SDRAM) module manufactured by Infineon Technologies (formerly HY, a division of Hyundai Electronics). Below are the factual specifications, descriptions, and features of this part:

### **Manufacturer:**  
- **Infineon Technologies** (formerly Hyundai Electronics, HY)  

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 256Mbit (32M x 8)  
- **Organization:** 4 Banks x 8,388,608 words x 8 bits  
- **Voltage:** 3.3V ± 0.3V  
- **Speed:** 7ns (143MHz)  
- **Package:** 54-pin TSOP-II (Thin Small Outline Package)  
- **Refresh:** 4,096 refresh cycles / 64ms  
- **CAS Latency (CL):** 2, 3 programmable  
- **Burst Length:** 1, 2, 4, 8, full page  
- **Interface:** LVTTL  

### **Descriptions and Features:**  
- Fully synchronous operation with a single 3.3V power supply  
- Internal pipelined architecture for high-speed data transfer  
- Programmable burst lengths (1, 2, 4, 8, or full page)  
- Auto Refresh (CBR) and Self Refresh modes  
- **On-Die Termination (ODT)** for improved signal integrity (if applicable in later revisions)  
- **Burst Termination:** Supports burst stop via command  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C), depending on variant  
- **Compliance:** JEDEC standard SDRAM  

This module was commonly used in PC memory, networking, and embedded systems during the late 1990s and early 2000s.  

(Note: Always verify datasheets for exact specifications, as variants may exist.)

Application Scenarios & Design Considerations

256 Mbit Double Data Rate SDRAM

Alternative Part Number

  • MT46V32M8TG-75 --: 256 Mbit DDR SDRAM organized as 32M x 8 in a TSOP package with 7.5 ns speed grade, functionally equivalent to the original DDR device.
  • K4H561638N-LCCC --: 256 Mbit DDR SDRAM in 16M x 16 organization with comparable 7.5 ns timing, widely used as a drop-in alternative for Infineon DDR parts.
  • IS43R16800E-6TL --: 128 Mbit DDR SDRAM with similar interface and speed grade, suitable when density tolerance allows and often available as a cost-effective substitute.
  • K4H560838F-TCCC --: 256Mb DDR SDRAM organized 32M x 8 with comparable 7ns-class timing, commonly used as a functional substitute in the same socket.
  • IS43R83200B-6TL --: 256Mb DDR SDRAM in 32M x 8 configuration with similar speed rating, offered as a cost-effective compatible alternative.

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