128 Mbit DDR SGRAM The part **HYB25D128323C-4.5** is a memory module manufactured by **Infineon**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Type:** DDR SDRAM
- **Density:** 128Mb (32M x 4 banks x 8 bits)
- **Speed:** -4.5 (corresponds to 4.5ns access time, ~222 MHz clock frequency)
- **Voltage:** 2.5V (±0.2V)
- **Organization:** 32M words × 8 bits
- **Package:** TSOP-II (Thin Small Outline Package)
- **Refresh Mode:** Auto-refresh & Self-refresh
- **CAS Latency (CL):** 2, 2.5, or 3 (programmable)
- **Burst Length:** 1, 2, 4, 8, or full-page
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
### **Descriptions:**
- The **HYB25D128323C-4.5** is a high-speed CMOS **Double Data Rate (DDR) SDRAM** designed for applications requiring high bandwidth and low power consumption.
- It supports **bidirectional data strobe (DQS)** for reliable data capture.
- Features **4 internal banks** for concurrent operations.
- Compliant with **JEDEC DDR SDRAM standards**.
### **Features:**
- **DDR Interface:** Double data rate architecture (2 data transfers per clock cycle).
- **Programmable Burst Length:** Supports 1, 2, 4, 8, or full-page bursts.
- **Differential Clock Inputs (CK & CK#):** Ensures precise timing.
- **Data Mask (DM) Support:** Controls write operations.
- **Auto Precharge Option:** For efficient bank management.
- **Low Power Consumption:** Standby and active power-saving modes.
- **On-Die Termination (ODT):** Improves signal integrity.
This information is strictly based on the manufacturer's datasheet and technical documentation.
