HYB18T512400B2F-3S

Partnumber	Manufacturer	Quantity	Availability
HYB18T512400B2F-3S Manufacturer: INFINEON, QIMONDA 512-Mbit Double-Data-Rate-Two SDRAM
HYB18T512400B2F-3S,HYB18T512400B2F3S	INFINEON, QIMONDA	4657	In Stock
Description and Introduction 512-Mbit Double-Data-Rate-Two SDRAM The part HYB18T512400B2F-3S is manufactured by Infineon. Here are its specifications based on Ic-phoenix technical data files: - Type: DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) - Density: 512 Mbit - Organization: 64M x 8 (8 banks) - Speed: -3S (DDR-333, CL2.5) - Voltage: 2.5V ±0.2V - Package: 66-pin TSOP-II (Thin Small Outline Package) - Operating Temperature: Commercial (0°C to +70°C) - Refresh: 8K/64ms - Burst Length: 2, 4, 8 - CAS Latency: 2.5 This is a standard DDR1 memory module component. No additional recommendations or interpretations are provided.
Application Scenarios & Design Considerations 512-Mbit Double-Data-Rate-Two SDRAM
Alternative Part Number MT47H64M16HR-3 --: DDR2 SDRAM 512Mb x16 device with comparable speed grade and package, widely available as a drop-in functional replacement. K4T51163QJ-BCF7 --: DDR2 512Mb x16 SDRAM in the same speed class, commonly used as an alternative to Infineon DDR2 parts. W9751G6KB-25 --: DDR2 512Mb x16 SDRAM offering similar density, organization, and timing, suitable for cost-effective substitution.

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HYB18T512400B2F-3S from INFINEON