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HY5V66GF-P from HYNIX

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HY5V66GF-P

Manufacturer: HYNIX

4 Banks x 1M x 16Bit Synchronous DRAM
Partnumber Manufacturer Quantity Availability
HY5V66GF-P,HY5V66GFP HYNIX 3698 In Stock

Description and Introduction

4 Banks x 1M x 16Bit Synchronous DRAM The part HY5V66GF-P is manufactured by HYNIX. Below are the specifications based on Ic-phoenix technical data files:

1. **Type**: DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory)  
2. **Density**: 64Mbit  
3. **Organization**: 4M x 16  
4. **Voltage**: 2.5V ± 0.2V  
5. **Speed**: 166MHz (PC1600)  
6. **Package**: 66-pin TSOP-II (Thin Small Outline Package)  
7. **Refresh**: 4K refresh cycles every 64ms  
8. **Operating Temperature**: Commercial (0°C to 70°C) or Industrial (-40°C to 85°C) depending on variant  
9. **Interface**: SSTL_2 (Stub Series Terminated Logic)  
10. **Burst Length**: 2, 4, or 8  

This information is strictly factual and derived from the manufacturer's datasheet.

Application Scenarios & Design Considerations

4 Banks x 1M x 16Bit Synchronous DRAM

Alternative Part Number

  • IS42S16400J-7TL --: Pin-compatible 64Mb SDR SDRAM with similar 4M x 16 organization and 3.3V interface, widely available as a drop-in replacement for HY5V66GF-P.
  • MT48LC4M16A2P-7E --: 64Mb SDR SDRAM in 4M x 16 configuration with matching 3.3V LVTTL interface and timing, a well-established alternative from a major memory vendor.
  • W9864G6JH-6 --: 64Mb SDR SDRAM organized as 4M x 16 with compatible pinout and voltage, offering a cost-effective second-source option for the Hynix part.

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