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HY5V66GF-H from HYUNDA

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HY5V66GF-H

Manufacturer: HYUNDA, HYNIX, HYUNDAI

4 Banks x 1M x 16Bit Synchronous DRAM

Partnumber Manufacturer Quantity Availability
HY5V66GF-H,HY5V66GFH HYUNDA, HYNIX, HYUNDAI 3924 In Stock

Description and Introduction

4 Banks x 1M x 16Bit Synchronous DRAM The part number HY5V66GF-H is a memory component manufactured by HYUNDAI (now SK hynix). Here are the factual specifications from Ic-phoenix technical data files:

1. **Manufacturer**: HYUNDAI (now part of SK hynix)  
2. **Part Number**: HY5V66GF-H  
3. **Type**: DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory)  
4. **Density**: 64Mb  
5. **Organization**: 4M x 16 (4 Meg words x 16 bits)  
6. **Voltage**: 2.5V (±0.2V)  
7. **Speed**: 166MHz (PC1600)  
8. **Package**: 54-pin TSOP-II (Thin Small Outline Package)  
9. **Refresh**: 4K refresh cycles every 64ms  
10. **Interface**: SSTL_2 (Stub Series Terminated Logic for 2.5V)  

This information is based on the manufacturer's datasheet for HY5V66GF-H. No additional guidance or suggestions are provided.

Application Scenarios & Design Considerations

4 Banks x 1M x 16Bit Synchronous DRAM

Alternative Part Number

  • IS42S16400J-7TL --: 64Mb SDR SDRAM in the same 54-pin TSOP-II package with comparable speed grade, widely available and pin-compatible replacement.
  • MT48LC4M16A2P-7E --: 64Mb SDR SDRAM organized 4M x 16, same package and interface, a well-established drop-in alternative for legacy designs.
  • W9864G6JH-6 --: 64Mb SDR SDRAM with matching 4M x 16 organization and TSOP-II footprint, suitable as a second-source option.

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